On Tue, 19 Oct 2004 13:51:49 -0700, "Symon" <symon_brewer@hotmail.com> wrote:>"glen herrmannsfeldt" <gah@ugcs.caltech.edu> wrote in message >news:cl3t0g$qob$1@gnus01.u.washington.edu... >> >> The suggestion was to improve the ground plane by making it >> thicker. To reduce via inductance you need as many of them >> as you can get. (Inductors in parallel.) The OP wanted a four >> layer board instead of following the suggested two ground and >> two power planes. >> >I just realised, making it thicker will only reduce its resistance. Its >inductance won't change. The inductance is determined by the loop area of >the current path. Think about it, when you calculate the inductance of a >coil, you don't need to know the wire diameter, just the diameter and number >of turns.What you can do, though, is play with the thickness of the prepreg. Make it thin enough and you increase the capacitance between ground and power planes. Not to a very high value, granted, but connected to the planes by a _very_ low inductance! - Brian
spartan 3 on 4 layers
Started by ●October 13, 2004
Reply by ●October 21, 20042004-10-21
Reply by ●October 21, 20042004-10-21
Symon wrote:> > I see in XAPP475 they say that "Unfortunately, IBIS 3.2 > still is not widely supported by simulators.". >Oops, I missed that explanation when skimming XAPP475 yesterday to find the TLine parameters. I was actually thinking of this sentence from Answer Record #19320 when I griped about Xilinx still using IBIS 2.1: "We do not have an IBIS model for LVDS_25_DT, as the IBIS specification does not provide a mechanism for representing the true differential termination" It's been I while since I read the IBIS specs, but I believe it was IBIS 3.x which added support for modeling a differential terminator, instead of having to bury single-ended terminator currents in the GND/VCC clamp table.> It wouldn't hurt to publish new IBIS3.2 or even 4.0 files > alongside the old ones though!My interest in having data available in one of the newer IBIS versions is not to actually use them in an IBIS simulator, but to have {almost} human-readable documentation of the differential package and I/O parasitics, which Xilinx doesn't currently publish in any other form. I suspect if you use the differential I/O standards, and then tie adjacent I/O pins as strong drivers to GND(VCCO), you can establish a nice GND S+ S- GND(VCCO) pinout in a leaded package and have a good shot at doing extremely fast I/O in an el-cheapo package. And I'd love to see a small S3 sold in one of the enhanced VQFP ground-paddle packages, for both thermal and electrical reasons, especially if done with a G S+ S- G pinout.> >Thanks for a very informative post, much appreciated >As were yours, thanks - I've been building 4-6 layer boards with FPGA's powered from localized plane fills, as you describe, for many years and generations of FPGA. Keeping the 'dirty' FPGA power plane localized in such a fashion also helps in RF/mixed signal board layouts. I took a look at building a simple first or second order SPICE package model of the leaded S3 parts a few months ago, but there wasn't any package data available in the IBIS files; if I get a chance to take another crack at it, I'll post some LTspice files. And if anyone out there has built a test fixture and made either differential TDR or VNA measurements on some of the S3 leaded packages, I'd love to see some real world data to help model the pin-pin coupling for a G S+ S- G pinout :) Brian